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This book highlights the importance of measurement of band gap in HD optoelectronic materials under intense electric field in nano-devices and strong external light waves. The importance of electron statistics (ES) is already well known since the inception of solid-state physics, and this monograph solely deals with the ES in heavily doped (HD) nanostructures by applying Heisenberg's Uncertainty Principle directly, without using the complicated Density-of-States function approach as given in the literature. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, Lead Germanium Telluride, Zinc and Cadmium Diphosphides and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices changes the band structure of semiconductors in fundamental ways, which have also been incorporated in the study of ES in HD quantized structures of optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under intense external fields has also been discussed in this context. The influences of magnetic quantization, crossed electric and quantizing fields, electric field, and light waves on the ES in HD semiconductors and super-lattices are discussed. The content of this book finds twenty-seven different applications in the arena of nano-science and nanotechnology. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph.D. aspirants and researchers in the fields of condensed matter physics, materials science, solid-state sciences, nano-science and technology, and allied fields in addition to the graduate courses in semiconductor nanostructures.