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Więcej informacji o Defects in SiO2 and Related Dielectrics: Science and Technology

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Opis

Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. §This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.

Szczegóły książki

Kategoria Książki po angielsku Mathematics & science Physics Electricity, electromagnetism & magnetism

• Pełny tytuł: Defects in SiO2 and Related Dielectrics: Science and Technology
• Autor: Gianfranco Pacchioni, Linards Skuja, David L. Griscom
• Język: Angielski
• Oprawa: Miękka
• Liczba stron: 624
• EAN: 9780792366867
• ISBN: 0792366867
• ID: 01396618
• Wydawca: Springer
• Waga: 892 g
• Wymiary: 234 × 153 × 20 mm
• Data wydania: 01. December 2000

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