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Opis

This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures. More than 500 up-to-date references and 76 problems make it useful as a research reference for physicists, engineers and students.Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied physicists, electrical engineers, materials scientists and ceramists, it includes ferroelectric fundamentals, especially for thin films, circuit diagrams and processsing chapters, but emphazises device physics. Breakdown mechanisms, switching kinetics and leakage current mechanisms have lengthly chapters devoted to them. The book will be welcomed by research scientists in industry and government laboratories and in universities. It also contains 76 problems for students, making it particularly useful as a textbook for fourth-year undergraduate or first-year graduate students.

Szczegóły książki

Kategoria Książki po angielsku Mathematics & science Physics Applied physics

• Pełny tytuł: Ferroelectric Memories
• Autor: James F. Scott
• Język: Angielski
• Oprawa: Miękka
• Liczba stron: 248
• EAN: 9783642085659
• ISBN: 3642085652
• ID: 01653559
• Wydawca: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
• Waga: 415 g
• Wymiary: 235 × 155 × 15 mm
• Data wydania: 09. December 2010

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